Nanoflakes of α‐Fe2O3 were prepared on Cu foil by using a thermal treatment method. The nanoflakes were characterized by X‐ray diffraction, scanning electron microscopy, high‐resolution transmission electron microscopy, and Raman spectroscopy. The reversible Li‐cycling properties of the α‐Fe2O3 nanoflakes have been evaluated by cyclic voltammery, galvanostatic discharge–charge cycling, and impedance spectral measurements on cells with Li metal as the counter and reference electrodes, at ambient temperature. Results show that Fe2O3 nanoflakes exhibit a stable capacity of (680 ± 20) mA h g–1, corresponding to (4.05 ± 0.05) moles of Li per mole of Fe2O3 with no noticeable capacity fading up to 80 cycles when cycled in the voltage range 0.005–3.0 V at 65 mA g–1 (0.1 C rate), and with a coulombic efficiency of > 98 % during cycling (after the 15th cycle). The average discharge and charge voltages are 1.2 and 2.1 V, respectively. The observed cyclic voltammograms and impedance spectra have been analyzed and interpreted in terms of the ‘conversion reaction' involving nanophase Fe0–Li2O. The superior performance of Fe2O3 nanoflakes is clearly established by a comparison of the results with those for Fe2O3 nanoparticles and nanotubes reported in the literature.

Reduced graphene oxide (rGO)-conjugated Cu(2)O nanowire mesocrystals were formed by nonclassical crystallization in the presence of GO and o-anisidine under hydrothermal conditions. The resultant mesocrystals are comprised of highly anisotropic nanowires as building blocks and possess a distinct octahedral morphology with eight {111} equivalent crystal faces. The mechanisms underlying the sequential formation of the mesocrystals are as follows: first, GO-promoted agglomeration of amorphous spherical Cu(2)O nanoparticles at the initial stage, leading to the transition of growth mechanism from conventional ion-by-ion growth to particle-mediated crystallization; second, the evolution of the amorphous microspheres into hierarchical structure, and finally to nanowire mesocrystals through mesoscale transformation, where Ostwald ripening is responsible for the growth of the nanowire building blocks; third, large-scale self-organization of the mesocrystals and the reduction of GO (at high GO concentration) occur simultaneously, resulting in an integrated hybrid architecture where porous three-dimensional (3D) framework structures interspersed among two-dimensional (2D) rGO sheets. Interestingly, "super-mesocrystals" formed by 3D oriented attachment of mesocrystals are also formed judging from the voided Sierpinski polyhedrons observed. Furthermore, the interior nanowire architecture of these mesocrystals can be kinetically controlled by careful variation of growth conditions. Owing to high specific surface area and improved conductivity, the rGO-Cu(2)O mesocrystals achieved a higher sensitivity toward NO(2) at room temperature, surpassing the performance of standalone systems of Cu(2)O nanowires networks and rGO sheets. The unique characteristics of rGO-Cu(2)O mesocrystal point to its promising applications in ultrasensitive environmental sensors.

We report the fabrication of vertically aligned NiO nanowalls on nickel foils using a plasma assisted oxidation method. Electrochemical properties of as-synthesized NiO nanowalls were evaluated by galvanostatic cycling and cyclic voltammetery. The results show a capacity of ∼638 (mA h)/g (at 1.25C rate), with excellent capacity retention of up to 85 cycles, when cycled in the range, 0.005−3.0 V vs Li. The superior electrochemical performance of NiO nanowalls in comparison to the previously reported results on nanosized NiO particles can be attributed to its large surface area and shorter diffusion length for mass and charge transport. A possible reaction mechanism is discussed. We also report that electron field emission studies show that the verticllay aligned NiO nanowalls are efficient field emitters with a turn-on field of 7.4 V/µm and a maximum current density of ∼160 µA/cm2 can be achieved.

As-grown transition metal dichalcogenides are usually chalcogen deficient and therefore contain a high density of chalcogen vacancies, deep electron traps which can act as charged scattering centers, reducing the electron mobility. However, we show that chalcogen vacancies can be effectively passivated by oxygen, healing the electronic structure of the material. We proposed that this can be achieved by means of surface laser modification and demonstrate the efficiency of this processing technique, which can enhance the conductivity of monolayer WSe2 by ∼400 times and its photoconductivity by ∼150 times.

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