A multiscale model that enables quantitative understanding and prediction of the size effect on the scattering properties of micro-and nanostructures is crucial for the design of light-emitting diode (LED) surface textures optimized for high light extraction efficiency (LEE). In this paper, a hybrid process for combining full-wave finite-difference time-domain simulation and a ray-tracing technique based on a bidirectional scattering distribution function model is proposed. We apply this method to study the influence of different pattern sizes of a patterned sapphire substrate on GaN-based LED light extraction from the micro-scale to the nano-scale. The results show that near-wavelength-scale patterns with strong diffraction are not expected to enhance the LEE. By contrast, micro-scale patterns with optical diffusion behavior have the highest LEE at a specific aspect ratio, and subwavelength-scale patterns that have antireflection properties show a marked enhancement of the LEE for a wide range of aspect ratios.

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A multiscale model that enables quantitative understanding and prediction of the size effect on scattering properties of micro-and nanostructures is crucial for the design of LED surface textures optimized for high light extraction efficiency (LEE). In this paper, a hybrid process for combining full-wave finite-difference time-domain simulation and a ray-tracing technique based on a bidirectional scattering distribution function model is proposed. We apply this method to study the influence of different pattern sizes of a patterned sapphire substrate on GaN-based LED light extraction from the microscale to the nanoscale. The results show that near-wavelength-scaled patterns with strong diffraction are not expected to enhance LEE. By contrast, microscaled patterns with optical diffusion behavior have the highest LEE at a specific aspect ratio, and subwavelengthscaled patterns that have antireflection properties show marked enhancement of LEE for a wide range of aspect ratios.

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