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Room temperature ferromagnetism of Mn+-implanted Si nanowires (NWs) has been discovered. The saturation magnetization was found to increase with the Mn concentration. Healing the damages in crystallinity at 600°C led to an increase in magnetization, while the ferromagnetism disappeared upon annealing at 800°C as Mn atoms segregated to the surface of NWs. The results indicate that Mn+-implanted Si NWs are potentially useful for nanoscale spintronics applications.

TaSi 2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

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