Abstract:Using Scanning Tunneling Microscopy and Spectroscopy, we probe the electronic structures of single layer MoS 2 on graphite. We show that the quasiparticle energy gap of single layer MoS 2 is 2.15 ± 0.06 eV at 77 K. Combining this with temperature dependent photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV, a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe the metallic edge states of single layer MoS 2 . In the bulk region of MoS 2 , the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS 2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.
Abstract:A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e 2 /h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe 2 . Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e 2 /h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.2
A new scanning probe-based microrheology approach is used to quantify the frequency-dependent viscoelastic behavior of both fibroblast cells and polymer gels. The scanning probe shape was modified using polystyrene beads for a defined surface area nondestructively deforming the sample. An extended Hertz model is introduced to measure the frequency-dependent storage and loss moduli even for thin cell samples. Control measurements of the polyacrylamide gels compare well with conventional rheological data. The cells show a viscoelastic signature similar to in vitro actin gels.
In this paper we investigate the coherence properties of a quantum dot under two-photon resonant excitation in combination with an additional photo-neutralization laser. The photo-neutralization increases the efficiency of the excitation process and thus, the brightness of the source, by a factor of approximately 1.5 for biexciton-exciton pairs. This enhancement does not degrade the relevant coherences in the system; neither the single photon coherence time, nor the coherence of the excitation process.
Superconductivity in the extreme two-dimensional limit is studied on ultrathin lead films down to two atomic layers, where only a single channel of quantum well states exists. Scanning tunneling spectroscopy reveals that local superconducting order remains robust until two atomic layers, where the transition temperature abruptly plunges to a lower value, depending sensitively on the exact atomic structure of the film. Our result shows that Cooper pairs can still form in the last two-dimensional channel of electron states, although their binding is strongly affected by the substrate.
Viscoelasticity of the leading edge, i.e., the lamellipodium, of a cell is the key property for a deeper understanding of the active extension of a cell's leading edge. The fact that the lamellipodium of a cell is very thin (<1000 nm) imparts special challenges for accurate measurements of its viscoelastic behavior. It requires addressing strong substrate effects and comparatively high stresses (>1 kPa) on thin samples. We present the method for an atomic force microscopy-based microrheology that allows us to fully quantify the viscoelastic constants (elastic storage modulus, viscous loss modulus, and the Poisson ratio) of thin areas of a cell (<1000 nm) as well as those of thick areas. We account for substrate effects by applying two different models-a model for well-adhered regions (Chen model) and a model for nonadhered regions (Tu model). This method also provides detailed information about the adhered regions of a cell. The very thin regions relatively near the edge of NIH 3T3 fibroblasts can be identified by the Chen model as strongly adherent with an elastic strength of approximately 1.6 +/- 0.2 kPa and with an experimentally determined Poisson ratio of approximately 0.4 to 0.5. Further from the edge of these cells, the adherence decreases, and the Tu model is effective in evaluating its elastic strength ( approximately 0.6 +/- 0.1 kPa). Thus, our AFM-based microrheology allows us to correlate two key parameters of cell motility by relating elastic strength and the Poisson ratio to the adhesive state of a cell. This frequency-dependent measurement allows for the decomposition of the elastic modulus into loss and storage modulus. Applying this decomposition and Tu's and Chen's finite depth models allow us to obtain viscoelastic signatures in a frequency range from 50 to 300 Hz, showing a rubber plateau-like behavior.
By using a low temperature scanning tunneling microscope we have probed the superconducting energy gap of epitaxially grown Pb films as a function of the layer thickness in an ultrathin regime (5-18 ML). The layer-dependent energy gap and transition temperature (Tc) show persistent quantum oscillations down to the lowest thickness without any sign of suppression. Moreover, by comparison with the quantum-well states measured above Tc and the theoretical calculations, we found that the Tc oscillation correlates directly with the density of states oscillation at E(F) . The oscillation is manifested by the phase matching of the Fermi wavelength and the layer thickness, resulting in a bilayer periodicity modulated by a longer wavelength quantum beat.
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