The bond length and energy changes of the constituents of alloys relative to their pure crystal values are calculated from an extension of Harrison’s method. It is demonstrated that the already weak HgTe bonds are destabilized by adjacent CdTe, HgS, or HgSe, but are stabilized by ZnTe. It is also argued that dislocation energies and the hardness of semiconductors vary as a high inverse power of the bond length of the constituents. Hence, the shorter ZnTe bond as an additive should improve the structural properties of HgTe and CdTe. Experiments that support these predictions are noted. The electronic transport properties of 0.1 eV band gap HgZnTe are about the same as those of HgCdTe, and the structural properties of the Zn compound are superior; thus, we conclude that HgZnTe is likely to be the better material for IR devices.
The incorporation of strain in order to improve mobility has become an important element in CMOS device scaling. In this work, we have developed a new moment-based model of extended defect kinetics and further studied the impact due to stress on the energies of impurities, point defects and particularly extended defects. We specifically look at point defect clusters which control transient enhanced diffusion (TED). The results enable comprehensive models for dependence of nanoscale device structures on stress which can be used for process optimization.
By using extreme-ultraviolet time- and angle-resolved photoemission spectroscopy (XUV-trARPES), we visualized the photoemission signature and ultrafast inter-state transitions for the electron-hole plasma and exciton states in monolayer MoS2 with full visions of energy and momentum.
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