Abstract:Mung bean CYP90A2 is a putative brassinosteroid (BR) synthetic gene that shares 77% identity with the Arabidopsis CPD gene. It was strongly suppressed by chilling stress. This implies that exogenous treatment with BR could allow the plant to recover from the inhibited growth caused by chilling. In this study, we used proteomics to investigate whether the mung bean epicotyl can be regulated by brassinosteroids under conditions of chilling stress. Mung bean epicotyls whose growth was initially suppressed by chilling partly recovered their ability to elongate after treatment with 24-epibrassinolde; 17 proteins down-regulated by this chilling were re-up-regulated. These upregulated proteins are involved in methionine assimilation, ATP synthesis, cell wall construction and the stress response. This is consistent with the re-upregulation of methionine synthase and S-adenosyl-L-methionine synthetase, since chilling-inhibited mung bean epicotyl elongation could be partially recovered by exogenous treatment with DL-methionine. This is the first proteome established for the mung bean species. The regulatory relationship between brassinosteroids and chilling conditions was investigated, and possible mechanisms are discussed herein.
This study proposes a novel chip-level packaged planar Ti/Pd/AglAgCIIKCI-gel micro reference electrode for the electrochemical and biomedical sensing applications. The miniaturized reference electrode is constructed by two wafers ("Ti/Pd/AglAgCI quasi reference electrode wafer" and "KCI-gel cap sealing wafer") and with a total dimension of only 9 mm (L) x 6 mm (W) x 1 mm (H). hundredfold less than the commercial Ag/AgCI reference electrode (OD = 12 mm). Many excellent characteristics were demonstrated by the optimized encapsulated solid-state micro reference electrode, including a very stable cell potential (5 mV drift voltage in 30,000 s), an approximately zero offset-voltage, a very low impedance « 1.50 k!!) and phase shift «8.98 0) at normal operation frequency range (0-1 kHz), and a low electro-chemical noise spectrum.
as shown in Fig. 4) and 25%, respectively. HSG was performed by using existing poly deposition tool with grain size from 15nm to A new DRAM cell design for 70nm generation is demonstrated. 20nm, which save the extra cost of new equipment investment.We develop a novel cell design which is different from that Fig.3b shows the interface of HSG poly grain and Si substrate with previously published for trench DRAM technology and can be very good interface without poly gap fill concern. shrunk into 70nm generation. Some innovative processes are also introduced to successfully demonstrated the cell function. Fig. 5a shows the top view SEM image of AA pattern, which is cut and isolated from each DT by process of DC (DT Collar) photo INTRODUCTION layer to form a small STI isolation. DC process provides a pre-STI
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