We present systematic works in characterization of CIGS nanotip arrays (CIGS NTRs). CIGS NTRs are obtained by a one-step ion-milling process by a direct-sputtering process of CIGS thin films (CIGS TF) without a postselenization process. At the surface of CIGS NTRs, a region extending to 100 nm in depth with a lower copper concentration compared to that of CIGS TF has been discovered. After KCN washing, removal of secondary phases can be achieved and a layer with abundant copper vacancy (V(Cu)) was left. Such compositional changes can be a benefit for a CIGS solar cell by promoting formation of Cd-occupied Cu sites (Cd(Cu)) at the CdS/CIGS interface and creates a type-inversion layer to enhance interface passivation and carrier extraction. The raised V(Cu) concentration and enhanced Cd diffusion in CIGS NTRs have been verified by energy dispersive spectrometry. Strengthened adhesion of Al:ZnO (AZO) thin film on CIGS NTRs capped with CdS has also been observed in SEM images and can explain the suppressed series resistance of the device with CIGS NTRs. Those improvements in electrical characteristics are the main factors for efficiency enhancement rather than antireflection.
The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm−2 to 2.6 × 107 cm−2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.
Compact and passive-alignment 4-channel x 2.5-Gbps optical interconnect modules are developed based on the silicon optical benches (SiOBs) of 5 x 5 mm2. A silicon-based 45 degrees micro-reflector and V-groove arrays are fabricated on the SiOB using anisotropic wet etching. Moreover, high-frequency transmission lines of 4 channel x 2.5 Gbps, and bonding pads with Au/Sn eutectic solder are also deposited on the SiOB. The vertical-cavity surface-emitting laser (VCSEL) array and photo-detector (PD) array are flip-chip assembled on the intended positions. The multi-mode fiber (MMF) ribbons are passively aligned and mounted onto the V-groove arrays. Without the assistance of additional optics, the coupling efficiencies of VCSEL-to-MMF in the transmitting part and MMF-to-PD in the receiving part can be as high as -5.65 and -1.98 dB, respectively, under an optical path of 180 microm. The 1-dB coupling tolerance of greater than +/- 20 microm is achieved for both transmitting and receiving parts. Eye patterns of both parts are demonstrated using 15-bit PRBS at 2.5 Gbps.
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