In this study we prepared molybdenum trioxide (MoO3) nanorods having average lengths of 0.5-1.5 μm and widths of approximately 100-200 nm through a one-step mechanical break-down process involving favorable fracturing along the crystal direction. We controlled the dimensions of the as-prepared nanorods by applying various imposing times (15-90 min). The nanorods prepared over a reaction time of 90 min were, on average, much shorter and narrower relative to those obtained over 30 min. Evaluations of lithium-ion storage properties revealed that the electrochemical performance of these nanorods was much better than that of bulk materials. As cathodes, the nanorods could deliver a high specific capacity (>315 mA h g(-1)) with losses of less than 2% in the first cycle at a rate of 30 mA g(-1); as anodes, the specific capacity was 800 mA h g(-1) at a rate of 50 mA g(-1). Relative to α-MoO3 microparticles, these nanorods displayed significantly enhanced lithium-ion storage properties with higher reversible capacities and better rate performance, presumably because their much shorter diffusion lengths and higher specific surface areas allowed more-efficient insertion/deinsertion of lithium ions during the charge/discharge process. Accordingly, enhanced physical and/or chemical properties can be obtained through appropriate nanostructuring of materials.

A one-step process for the preparation of NbSe2 nanostructures under the effects of mechanical forces to be used as Pt replacement CEs in DSSCs is reported.

The Zernike electrostatic phase plate (ZEPP) consisting of three ring electrodes and two insulating rings has been fabricated using Micro Electro-Mechanical System processes. The electrostatic field produced in the phase plate was measured by electrostatic force microscopy. The electrostatic field and focal length of the phase plate is calculated using electron optics principles. The comparison of the experimental electrostatic field and the theoretical calculated is discussed. Finally, we report the application of ZEPP to enhance contrast of the SiON(x)/SiO(2) interface in an NMOS semiconductor device. The quantitative analysis of the contrast enhancement versus the applied bias is discussed in detail.

We demonstrate that the Raman intensities of G and 2D bands of a suspended graphene can be enhanced using a gold tip with an apex size of 2.3 μm. The enhancement decays with the tip-graphene distance exponentially and remains detectable at a distance of 1.5 μm. Raman mappings show that the enhanced area is comparable to the apex size. Application of a bias voltage to the tip can attract the graphene so that Raman signals are intensified. The exponential enhancement-distance relationship enables the measurement of the graphene deformation, and the Young's modulus of graphene is estimated to be 1.48 TPa.