We report comprehensive studies of the single crystal growth and electrical
transport properties for various samples of TaAs, the first experimentally
confirmed inversion symmetry-breaking Weyl semimetal. The transport parameters
for different samples are obtained through the fitting of the two band model
and the analysis of Shubnikov de Haas oscillations. We find that the ratio
factor of transport lifetime to quantum lifetime is intensively enhanced when
the Fermi level approaches the Weyl node. This result is consistent with the
side-jump interpretation derived from a chirality-protected shift in the
scattering process for a Weyl semimetal.Comment: This is a modified version of arXiv:1502.0025
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z_{2} topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
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