In recent years, the study of organic–inorganic halide perovskite as an optoelectronics material has been a significant line of research, and the power conversion efficiency of solar cells based on these materials has reached 25.5%. However, defects on the surface of the film are still a problem to be solved, and oxygen plasma is one of the ways to passivate surface defects. In order to avoid destroying the methylammonium lead iodide (MAPbI3), the influence of plasma powers on film was investigated and the cesium triiodide (CsPbI3) quantum dots (QDs) were doped into the film. In addition, it was found that oxygen plasma can enhance the mobility and carrier concentration of the MAPbI3 film.
The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (V th ) shift, the time dependency of serial I D -V G test is included in building an accurate V th shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.
Author KeywordsIGZO TFT; Model; V th shift.
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