At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.
Cr is a metal with lower resistivity (as compared with Si) and positive temperature coefficient of resistance (TCR value) and Si is a semiconductive material with higher resistivity and negative TCR value. For that, the commercial-grade targets of 28 wt.% Cr-72 wt.% Si, 40 wt.% Cr-60 wt.% Si and 55 wt.% Cr-45 wt.% Si were used to deposit the thin-film materials using sputtering method at the same parameters, and their physical and electrical properties were measured and compared under different deposition powers. The crystallization and the surface morphology of the CrSi-based thin-film resistors were measured using X-ray diffraction (XRD) pattern and field emission scanning electron microscopy (FESEM). In order to find the effect of deposition power on the average atomic ratio of Cr and Si, the elemental ratios were also measured as a function of deposition power for different CrSi-based targets by FESEM equipped with Energy-Dispersive X-ray spectroscopy (EDX) for elemental Cr and Si. The effects of Cr concentration and deposition power on the sheet resistances, resistivity and TCR values of the deposited CrSi-based thin-film resistors were also well measured and compared, and the reasons to cause the variations of resistivity and TCR values were also investigated and discussed.
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