Silicon nitride (Si 3 N 4 ) has excellent thermo-mechanical properties, and can be used as heat dissipation substrate for various devices. Si 3 N 4 thin films are generally synthesised by chemical vapour deposition (CVD) or plasma-enhanced CVD. The use of polysilazanes (PSZs) as a precursor to the synthesis of Si 3 N 4 has attracted significant attention because of their high mouldability and processability. In this study, Si 3 N 4 thick films were prepared on silicon wafers or aluminium substrates by a spin-or dip-coating liquid PSZ, followed by UV curing and IR heat treatment under various conditions. The effects of the heat treatment conditions on the Si 3 N 4 thick film surface were analysed by optical microscopy, X-ray diffraction, and scanning electron microscopy. An almost single phase of Si 3 N 4 was synthesised successfully on the single crystalline silicon with UV curing at 400°C for 30 min and IR heating at 800°C in N 2 atmosphere.
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