Aiming at the problem of crosstalk between microstrip lines, a method of
reducing crosstalk by using Cross-Shape Resonators (CSR) structures is
proposed. On the premise of not changing the spacing of microstrip
lines, this method adds CSR structures between the coupled microstrip
lines to increase the capacitive coupling and thus to suppress the
far-end crosstalk. Based on the analysis of the equivalent circuit of
CSR structure, the parameters simulation and verification are carried
out by ADS and HFSS software. Through HFSS simulation and physical test
of the designed CSR structure, the results show that: the CSR structure
can significantly reduce the far-end crosstalk by about 15 dB in the
frequency of 0~10GHz, and the maximum can reach 43 dB.
Compared with 3W crosstalk reduction method and RectangularShape
Resonators (RSR) crosstalk reduction method, the crosstalk reduction
effect is improved.
A method to reduce crosstalk using TL-shaped defect microstrip structure
(DMS) is proposed to solve the far-end crosstalk between microstrip
lines. This method optimizes the ratio of the capacitive coupling and
the inductive coupling between the coupled microstrip lines by etching
the TL-shaped DMS on the microstrip line and reduces the strength of the
electromagnetic (EM) coupling, which can achieve crosstalk suppression.
The equivalent circuit model, S-parameters and full-wave EM simulations
are used to analyze the crosstalk between the microstrip lines etched
with and without the TL-shaped DMS. High Frequency Structure Simulator
(HFSS) software simulation and samples test results show that the
TL-shaped DMS can effectively reduce the far-end crosstalk while
guaranteeing the transmission ability of microstrip line to the signal.
The maximum far-end crosstalk can be reduced by 42dB in the frequency
range of 0–8 GHz and the test results of the samples are in good
agreement with the simulation results.
Aiming at the problem of far‐end crosstalk between microstrip lines, a method to improve crosstalk by using the TL‐shaped defective microstrip structure (DMS) is proposed. This method optimizes the ratio of the capacitive coupling and the inductive coupling between coupled microstrip lines by etching TL‐shaped DMSs on the microstrip lines, reducing the strength of electromagnetic coupling, thereby achieving an improvement in crosstalk. The quantitative equivalent model, S‐parameters, and full‐wave EM simulations are used to analyze the frequency response of the TL‐shaped DMS and crosstalk between the microstrip lines. The results of High Frequency Structure Simulator software simulation and sample texts show that the TL‐shaped DMS can effectively improve the far‐end crosstalk while ensuring the transmission of signals on the microstrip line. In the frequency range of 0–8 GHz, the far‐end crosstalk can be improved by about 11 dB, and the maximum can be improved by 42 dB. Compared with other DMSs, the TL‐shaped DMS has better crosstalk improvement effect and practical application potential.
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