An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependences of n and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni-AlN Schottky junction from the inhomogeneity analysis of the current-voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the currentvoltage characteristics of inhomogeneous SBDs. Index Terms-AlN, non-polar, Schottky barrier diode, inhomogeneity, thermionic emission, physical vapor transport.

We report, for the first time, the nonlinear absorption at the 2 µm waveband of three Sb-related materials including two Sb compounds, GaSb and InSb, and one Sb alloy, Ge8Sb92. These saturable absorbers (SAs) were coated on tapered single mode fibers by the magnetron-sputtering deposition method. By incorporating these SAs into Tm-doped fiber lasers, ultrafast mode-locked solitons could be readily obtained. Stable pulse trains with 922 fs/753 fs/1005 fs pulse durations, 31.35 mW/37.70 mW/16.60 mW output powers, 93 dB/80 dB/92 dB signal-to-noise ratios were achieved with GaSb/InSb/Ge8Sb92, respectively. Our findings demonstrate that these materials can be widely used for photonic devices in the 2 µm waveband where ultrafast optical switching and modulating are desired.

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