High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n≫2.0) in the prepared ZnO/diamond p–n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p–n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode.
A reproducible and steady magnetoresistance switch effect of Sn‐doped Bi2Te3 topological insulator films with a Pt/Sn‐doped Bi2Te3/Pt structure is observed when a parallel magnetic field is applied.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.