Scaling of TEM specimen thickness is vital to avoid overlapped semiconductor device structures due to the shrinking of device geometry and to obtain good high-resolution TEM images. Nevertheless, thinner TEM specimen fabricated by conventional ex-situ lift-out technique is often impeded by amorphization and warping effect. The problems can be resolved by in-situ lift-out technique coupled with lower accelerating energy of FIB but the bottlenecks remain to be solved by conventional ex-situ lift-out methodology. An ex-situ lift-out technique has been developed to prepare thin TEM lamella without warping. The specimens prepared by the so-called single and double holder-tilt method are warping free. It can be coupled with lower FIB voltage for ultrathin lamella fabrication.
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