High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and Sb(Te) antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.
Time-of-flight (TOF) positron emission tomography (PET) was studied and preliminarily developed in the 1980s, but the lack of a scintillator able to deliver at the same time proper time resolution and stopping power has prevented this technique from becoming widespread and commercially available. With the introduction of LSO in PET, TOF is now a feasible option. TOF reconstruction has been implemented in the CPS Hi-Rez PET scanner, both with 2D filtered-back-projection (FBP2D) and 3D ordered subset expectation maximization (OSEM3D). A new procedure has been introduced in the time alignment to compensate for the limited digital time resolution of the present electronics. A preliminary version of scatter correction for TOF has been devised and is presented. The measured time resolution of 1.2 ns (FWHM) allowed for a signal-to-noise ratio increase of about 50% in phantoms of about 40 cm transaxial size, or a gain larger than 2 in noise equivalent counts (NEC). TOF reconstruction has shown the expected improvement in SNR, both in simulation and experimental data. First experimental results show two improvements of TOF reconstruction over conventional (non-TOF) reconstruction: a lower noise level and a better capability to resolve structures deep inside large objects.
Motivated by the occurrence of superconductivity transition in Cu-doped topological insulator Bi 2 Se 3 , we perform a combined study of low temperature scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy experiments and of ab initio density functional theory to clarify the doping nature of Cu atoms in Bi 2 Se 3 films. By measuring the structural and electronic properties of the Cu-doped Bi 2 Se 3 films at different doping temperatures, we find that Cu atoms behave as donors at intercalated and interstitial sites in Bi 2 Se 3 films. Only the interstitial defect density plays an important role in the observation of Landau quantization of the topological surface states in Bi 2 Se 3 .
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