Nanocolumn pseudo-regular arrays of silicon with controlled aspect ratio and porosity are fabricated by electron-beam evaporation using the glancing angle deposition (GLAD) method with vapour impinging at oblique incidence onto rapidly rotating substrates. The width W at positions y along the height of one individual column scales with y following a power law dependence W approximately y(p). We demonstrate that the scaling exponent value, p, can be modified from 0.6 to 0.3 by varying the vapour incidence angle from 75 degrees to a glancing 89 degrees from the substrate normal. This exponent is an important morphological factor for thin films, as it determines the morphological correlation length, nanocolumn profile, size, and spacing. The nanocolumn mean diameter can be varied between 12 and 40 nm, while the intercolumnar spacing can be adjusted between 37 and 85 nm via changing the incidence angle. The growth mechanism and film morphology are explored in detail.

We propose an application of spectroscopic ellipsometry pertinent to the characterization of nanostructure inclination of oblique thin films. This technique is employed ex situ in the measurement of silicon thin films fabricated at oblique incidence and modeled as aggregate microstructures formed from amorphous silicon, silicon oxide, and void in the effective medium model. The technique may also be utilized in situ as a powerful probe for the characterization of oblique thin films during their fabrication and processing.

Thickness evaluation is a particular challenge encountered in the fabrication of nanosculptured thin films fabricated by glancing angle deposition (GLAD). In this article, we deduce equations which allow for accurate in situ thickness monitoring of GLAD thin films deposited onto substrates tilted with respect to the direction of incoming vapor. Universal equations are derived for the general case of Gaussian vapor flux distribution, off-axis sensors, variable substrate tilt, and nonunity sticking coefficient. The mathematical description leads to an incidence angle dependence of thickness and density, allowing for quantitative prediction of porosity in samples with different morphologies and thickness calibrations. In addition, variation of sticking probability with the incidence angle creates a nonmonotonic variation of the film thickness and porosity with the substrate tilt. We discuss the implications of the substrate type, sensor type, and source geometry in a precise quantitative determination of the thickness of thin films fabricated on tilted substrates. Our equations can be particularized for the case of films fabricated at normal incidence.

Rugate filters are thin-film optical interference coatings with sinusoidal variation of the refractive index. Several of these filters were fabricated with glancing angle deposition, which exploits atomic competition during growth to create nanoporous materials with controllable effective refractive index. This method enables the fabrication of devices with almost arbitrary refractive index profiles varying between the ambient, 1.0, and the index of the film material, in this case silicon with an index of 4.0 (at 600 nm). As these filters are inherently porous, oxidation of the silicon can occur throughout the device layer, and here we study the intentional oxidation of silicon filters by high-temperature reaction with gaseous oxygen. We find that a significant portion of the silicon filter oxidizes in approximately 10 min when heated to 600 degrees C-650 degrees C in an oxygen environment; oxidation then continues slowly over several hours. The presence of water vapor has little apparent effect on the oxidation reaction, and attempts to oxidize with ozone at room temperature were unsuccessful. As silicon filters oxidize to become silica, spectral blueshifts and increased short-wavelength transmittance are observed. Measured and calculated transmittance spectra generally agree, although the lack of absorption and dispersion in the theoretical model limits detailed comparison.