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ZnO and TiO2 are direct wide band gap semiconductors with intriguing properties. A wide range of applications makes it one of the most studied materials in the past decade, particularly when elaborated as nanostructures. In this work, we focus on synthesis of CNTs modified ZnO and TiO2 thin films using sol-gel method. The morphological and optical characterizations of the based ZnO and TiO2 films were carried out using scanning and transmission electron microscopy (SEM and TEM), XRD and UV spectroscopy. Electrical properties of the deposited ZnO/CNTs and CNTs /TiO2 were studied using I-V measurements at room temperature in metal/semiconductor/metal configuration, by the use of an array of metallic micro-electrodes deposited on the surface of the elaborated thin films. This allows determining qualitatively the electrical conductivity of thin films and the different parameters of the Schottky junction between the composites nano-films and the substrate. This study is necessary for future applications in solar cell.

In this paper, we have investigated the stability, mechanical properties, and the microstructure of wood-plastic composites, which were fabricated using recycled high-density polyethylene (HDPE) with pine wood flour used as fillers. Composite panels were obtained using hot-press molding. The tensile and flexural properties of the composites based on recycled HDPE revealed the strength properties of the composites can be improved by increasing the polymer content, also the composite formulation significantly improved the morphology and the stability. Scanning Electron Microscope (SEM) was used to characterize the morphology of the wood particulate/HDPE interface. It was clearly proved from the results that wood-plastic composite (WPC) based on recycled high density polyethylene (HDPE) can be successfully utilized to fabricate stable and strong WPCs.

The effect of (Be- and P-) dopant has been investigated on the electronic structure and optoelectronic properties of LiMgN alloy, where the (Be and P) amount is 6.25%. The LiMgN alloy has an XYZ form which is crystallized in the F4 ̅3m (N° 216) space group. The “X and Y” are being substituted by Be and Z is substituted by P. The present investigation is carried out within the Wien2K package inside the TB-mBJ approximation. The present findings show that the Burstein–Moss (BM) shift is observed when Be is being in the Li position, and the Fermi level lies inside the CB. The “apparent band gap” of Be doped LiMgN semiconductor is increased as the absorption edge is pushed to higher energies as a result of some states close to the CB being populated. This conduct is significant, as it gives a chance to get different optical characteristics for the same material and the “apparent band gap” is equal to the actual band gap plus Burstein–Moss (BM) shift. The transmittance T(%) of Be element in the Y site is 76%. For the P doped LiMgN, the transmittance is 73 %.