In recent years, antiferroelectric materials have attracted significant attention as energy storage materials in pulsed power systems. In this study, (1-x)PbZrO 3 -xSrTiO 3 (PZO-STO) antiferroelectric films were prepared, and the effects of the STO content on the microstructure and energy storage performance of the thin films were investigated in detail. The results showed that when the PZO/STO ratio was near the morphotropic phase boundary, the long-range PZO-STOordered structure could be broken by the paraelectric nanograins generated at the grain boundary. The number of nanoparticles increased gradually with an increase in the STO content, thereby leading to the microstructure transformation of the thin films from antiferroelectric to relaxation ferroelectric. When the STO content was 20%, the as-prepared thin film had a maximum energy storage density of 15.26 J/cm 3 , which was 117.14% higher than that of the pure PZO thin film.
To improve the ability of rare‐earth (RE) silicates to resist molten calcium–magnesium–aluminosilicate (CMAS) at high temperature, a novel high‐entropy (4RE0.25)2Si2O7/(4RE0.25)2SiO5 (RE = Y, Yb, Er, and Sc) multiphase ceramic was prepared by a two‐step process. During sintering, (4RE0.25)2SiO5 can react with SiO2 at the grain boundaries of (4RE0.25)2Si2O7, which can not only purify the grain boundary but also promote the growth of the original (4RE0.25)2Si2O7 grains, thereby significantly improving the ability to resist molten CMAS corrosion at high temperature. After corroding at 1500°C for 48 h, the reaction layer of the multiphase ceramic was only 55 μm thick. Our results confirm that the high‐entropy RE silicate multiphase ceramics represent an effective way to improve the ability to resist molten CMAS corrosion at high temperature.
In this study, 0.94Mg (1-3x/2) Ce x TiO 3 −0.06(Ca 0.8 Sr 0.2 )TiO 3 (MCe x T−CST, 0≤x≤0.01) composite ceramics were prepared at a low temperature of 1175 • C by using the 50-nm-sized powders. The effects of Ce 3+ doping on crystalline phase, microstructure, and microwave dielectric properties of MCe x T−CST were studied. A main ilmenite (Mg,Ce)TiO 3 phase and a minor perovskite (Ca 0.8 Sr 0.2 )TiO 3 phase coexist well with the appearance of impurity MgTi 2 O 5 phase in MCe x T−CST. The dielectric properties of MCe x T−CST are affected by the molecular polarizability, the impurity phase, and the Ce 3+ doping. The replacement of Mg 2+ by high valence Ce 3+ could effectively inhibit the formation of oxygen vacancy, resulting in the enhancement of Q×f. When x = 0.005, MCe x T−CST exhibits microwave dielectric properties with a moderate ε r of 21.5, a high Q×f of 67 000 GHz, and a near-zero τ f of −0.74 ppm/ • C. The results reveal that the Ce 3+ substitution is a prospective approach to optimize the microwave dielectric properties of MgTiO 3 -based ceramics.
K E Y W O R D S0.94Mg (1-3x/2) Ce x TiO 3 −0.06(Ca 0.8 Sr 0.2 )TiO 3 , Ce 3+ doping, low-temperature sintering, microwave dielectric properties 1 3392
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