New markets are emerging for digital electronic image device, especially in visual communications, PC camera, mobile/cell phone, security system, toys, vehicle image system and computer peripherals for document capture. To enable one-chip image system that image sensor is with a full digital interface, can make image capture devices in our daily lives. Adding a color filter to such image sensor in a pattern of mosaics pixel or wide stripes can make image more real and colorful. We can say "color filter makes the life more colorful" ! What color filter is? Color filter means can filter image light source except the color with specific wavelength and transmittance that is same as color filter itself. Color filter process is coating and patterning green, red and blue (or cyan, magenta and yellow) mosaic resists onto matched pixel in image sensing array pixels. According to the signal caught from each pixel, we can figure out the environment image picture.Widely use of digital electronic camera and multimedia applications today makes the feature of color filter becoming bright. Although it has challenge but it is very worthy to develop the process of color filter. We provide the best service on shorter cycle time, excellent color quality, high and stable yield. The key issues of advanced color process have to be solved and implemented are planarization and micro-lens technology [2][3} [4]. Lots of key points of color filter process technology have to consider will also be described in this paper.
Titanium zirconium nitride ͓͑Ti,Zr͒N͔ films were prepared on Si substrates by dc reactive magnetron sputtering from a Ti-5 atom % Zr alloy target in N 2 /Ar gas mixtures. Material characteristics of the ͑Ti,Zr͒N films were investigated by X-ray photoelectron spectroscopy, four-point probe, X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. According to those results, the deposition rate, chemical composition, crystalline structure, and film resistivity of the deposited films correlate with the N 2 /Ar flow ratio. The microstructure of the ͑Ti,Zr͒N films was an assembly of very small columnar crystallites with a rock-salt ͑NaCl͒ structure and an enlarged lattice constant ͑over pure TiN͒. A minimum film resistivity of 59.3 ⍀ cm was obtained at an N 2 /Ar flow ratio of 2.75, corresponding to near stoichiometric film composition ͓N/(Ti,Zr) ϭ 0.96͔ and crystalline structure.
͑Ti,Zr͒N films were prepared by dc reactive magnetron sputtering from a Ti-5 atom % Zr alloy target in N 2 /Ar gas mixtures and then employed as diffusion barriers between Cu thin films and Si substrates. Material characteristics of the ͑Ti,Zr͒N film were investigated by X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy ͑XTEM͒. The ͑Ti,Zr͒N film microstructure was an assembly of very small columnar crystallites with a rock-salt ͑NaCl͒ structure. Metallurgical reactions of Cu/(Ti,Zr)N 0.95 /Si, Cu/(Ti,Zr)N 0.76 /Si, and Cu/TaN 0.71 /Si were studied by X-ray diffraction and sheet resistance measurements. The variation percentage of sheet resistance for all Cu/barrier/Si systems stayed at a constant value after annealing up to 500°C for 30 min. However, the sheet resistance increased dramatically after annealing above 750°C for Cu/(Ti,Zr)N 0.95 /Si, and 500°C for both Cu/(Ti,Zr)N 0.76 /Si and Cu/TaN 0.71 /Si. For these samples, the interface deteriorated seriously and formation of Cu 3 Si was observed by XTEM. Our results suggest that the refractory binary metal nitride film, ͑Ti,Zr͒N, can be used as a diffusion barrier for Cu metallization as compared to the well-known TaN film.Copper ͑Cu͒ has drawn much attention as a new interconnect material for deep submicrometer ultralarge scale integrated ͑ULSI͒ circuits because of its lower resistivity ͑1.67 ⍀-cm͒ and superior electromigration resistance as compared to Al and Al alloys. 1 However, Cu reacts with Si at relatively low temperatures, which can deteriorate device operation. Therefore, a diffusion barrier must be inserted between Cu and Si for the suppression of Cu diffusion. In addition, future barriers must be successful in resisting copper penetration at 30 Å 2 and have good adhesion performance. Tantalum nitride ͑TaN͒ has been widely used as the diffusion barrier for Cu metallization because of its high thermal stability and the absence of any compounds between Cu and Ta, and also Cu and N. [3][4][5] In comparison with TaN, TiN is not as effective as a barrier against Cu diffusion. However, the encouraging results reported by Lin et al. 6 suggest that ͑Ti,Zr͒N may be a good candidate for a Cu diffusion barrier, due to its low bulk resistivity (TiZr ϳ 26 ⍀-cm, (Ti,Zr)N ϳ 60 ⍀-cm) and excellent adhesion to Cu. Additionally, the use of TiN barriers in Al/Si metallization is mature. 7 Thus, the applicability of ͑Ti,Zr͒N to Cu-based interconnects should be urgently investigated.According to Duwez and Odell, 8 the face-centered cubic ͑fcc͒ nitrides ␦-TiN and ␦-ZrN are completely miscible. In the course of their work, Knotek et al. 9,10 deposited ͑Ti,Zr͒N thin films by cathodic reactive magnetron sputtering using a titanium-zirconium target containing 30 atom % zirconium. Only one fcc phase was observed with the sputtering conditions used, and the crystal lattice constant was in good agreement with a ͑Ti,Zr͒N solid solution, showing a ratio of Zr/(Ti ϩ Zr) ϭ 0.30. However, prior to this work no investigation has studied the perform...
As the device dimension continues to shrink with technology development, the need for a thinner barrier for copper has risen in order to meet the requirements for finre device performance. The conventional barrier process by Physical Vapor Deposition (PVD) has the limitation to achieve conformal step coverage across the dual damascene structure [ 11, and therefore would face a bottleneck when the thickness reduction is required. In this work, the Atomic Layer Deposition (ALD) technique is applied for the TaN barrier process of a 90nm generation copper dual damascene integration with low-k dielectrics of k=3.0. The ALD technique could not only provide a conformal step coverage on both trenches and vias [2-4], it could also allows reasonable thickness control for thickness in the order of lOA. The integration results show that ALD TaN has promising electrical performance on sheet resistance, via resistance, and line-to-line leakage, and it also has superior reliability performance on electromigration, stress migration, and bias temperature test as compared with conventional PVD TaN. The ALD TaN technique is shown to provide a robust barrier process for next generation devices.
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