We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO 4 /Nd:YVO 4 /YVO 4 crystal and pumped by a wavelength-locked 878.9 nm diode laser. A maximum output power of 5.3 W is achieved at a pump power of 26 W, corresponding to an optical conversion efficiency of 20% and a slope efficiency of 21%. The Raman threshold for the diode pump power was only 0.92 W. The results reveal that in-band pumping by a wavelength-locked diode laser significantly enhances output power and efficiency of self-Raman lasers by virtue of improved pump absorption and relieved thermal loading.
In this work, graded barrier InGaN light-emitting diodes with increasing indium composition barriers are proposed and investigated numerically. When the conventional GaN barriers are replaced by this unique graded InGaN barrier design, the forward voltage at 100 mA is reduced from 3.32 V to 3.27 V, and the efficiency droop is improved from 46.6% to 7.5%. The simulation results observed in this work indicate that these improvements can be attributed to increased electron confinement and enhanced hole injection efficiency caused by the modified energy band diagram.
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