Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe to exhibit electron-dominated transport with high mobility (µ = 216 cm V s ) and on/off ratio up to 10 . Hole-dominated-transport PdSe can be obtained by molecular doping using F -TCNQ. This pioneer work on PdSe will spark interests in the less explored regime of noble-TMDCs.

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The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.

Coreshell-like Ag2 O/Ag2 CO3 nanoheterostructures with tailored interface are fabricated by a facile, low-cost and one-step phase transformation method. The unique bandgap structure of the Ag2 O/Ag2 CO3 exhibits high separation efficiency of photogenerated electrons and holes, which effectively protects the Ag2 CO3 semiconductor to avoid its photoreduction and gives rise to high activity and stability in degradation of the typical water pollutants.

We report the visible light photocatalytic properties of a composite material consisting of Au25(SR)18 nanoclusters (R:CH2CH2Ph) and TiO2 nanocrystals. The effects of Au25(SR)18 nanoclusters on the photocatalytic activity of TiO2 nanocrystals were evaluated in the reaction of photocatalytic degradation of methyl orange. The loading of Au25(SR)18 nanoclusters onto TiO2 results in strong visible light absorption by the composite and, more importantly, a 1.6 times increase in visible light photocatalytic activity. Furthermore, the Au25(SR)18/TiO2 composite nanostructure exhibits high stability in recycling tests. The Au25(SR)18 nanolusters dispersed on the TiO2 surface can act as a small-band-gap semiconductor to absorb visible light, giving rise to electron–hole separation and producing singlet oxygen (1O2). Both the generated hydroxyl radicals (HO•) and 1O2 are rationalized to be responsible for the decomposition of the dye.

Noble metal/semiconductor nanocomposites play an important role in high efficient photocatalysis. Herein, we demonstrate a facile strategy for fabrication of hollow Pt-ZnO nanocomposite microspheres with hierarchical structure under mild solvothermal conditions using Zn (CH(3)COO)(2)·2H(2)O and HPtCl(4) as the precursors, and polyethylene glycol-6000 (PEG-6000) and ethylene glycol as the reducing agent and solvent, respectively. The as-synthesized ZnO and Pt-ZnO composite nanocrystals were well characterized by powder X-ray diffraction (XRD), nitrogen-physical adsorption, scanning electron microscopy (SEM), energy dispersive X-ray (EDX), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectra (DRS), and photoluminescence (PL) emission spectroscopy. It was found that Pt content greatly influences the morphology of Pt-ZnO composite nanocrystals. Suitable concentration of HPtCl(4) in the reaction solution system can produce well hierarchically hollow Pt-ZnO nanocomposite microspheres, which are composed of an assembly of fine Pt-ZnO nanocrystals. Photocatalytic tests of the Pt-ZnO microspheres for the degradation of the dye acid orange II revealed extremely high photocatalytic activity and stability compared with those of pure ZnO and corresponding Pt deposited ZnO. The remarkable photocatalytic performance of hollow Pt-ZnO microspheres mainly originated from their unique nanostructures and the low recombination rate of the e(-)/h(+) pairs by the platinum nanoparticles embedded in ZnO nanocrystals.

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III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physical vapor deposition (PVD) method. The high quality of the sample was confirmed by complementary characterization techniques such as Raman spectroscopy, atomic force microscopy (AFM) and high resolution annular dark field scanning transmission electron microscopy (ADF-STEM). We found the co-existence of different stacking sequence (β- and γ-InSe) in the same flake with a sharp grain boundary in few-layered InSe. Edge reconstruction is also observed in monolayer InSe, which has a distinct atomic structure from the bulk lattice. Moreover, we discovered that the second-harmonic generation (SHG) signal from monolayer InSe shows large optical second-order susceptibility that is 1–2 orders of magnitude higher than MoS2, and even 3 times of the largest value reported in monolayer GaSe. These results make atom-thin InSe a promising candidate for optoelectronic and photosensitive device applications.