In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an NH 3 flow with the variation of B 2 O 3 additives within a temperature range of 300-1050 o C. The additive effect of B 2 O 3 on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of B 2 O 3 additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time (t c ) shortened. The XPS results showed that Boron compounds of B 2 O 3 and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase B 2 O 3 due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and B 2 O 3 mixed powder by an ammonification route through β-Ga 2 O 3 intermediate state. During the ammonification process, boron compounds of B 2 O 3 and BN coated β-Ga 2 O 3 and GaN particles limited further nitridation processes.
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