Electron mobility of 4,7-diphyenyl-1,10-phenanthroline estimated by using space-charge-limited currentsThe electronic properties and chemical interactions of cathode structures using 4,7-diphenyl-1, 10-phenanthroline ͑Bphen͒ doped with rubidium carbonate ͑Rb 2 CO 3 ͒ as electron injection layers were investigated. Current-voltage characteristics reveal that the devices with Bphen/ Rb 2 CO 3 / Al as cathode structures possess better electron injection efficiency than those with cathode structures of Bphen/LiF/Al. Ultraviolet and x-ray photoemission spectroscopy shows that n-type doping effects resulting from Rb 2 CO 3 and the gap states created by aluminum deposition are both keys to the improved carrier injection efficiency. Moreover, theoretical calculation indicates that the chemical reaction between aluminum and the nitrogen atoms in Bphen is the origin of the gap states.
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