We report new DOD structure employing WOLED with color filters patterning RGBW sub‐pixels. The DOD structure consists of the top plate on which organic layer was evaporated and the bottom plate involving TFT arrays. for white OLED, the top plate contains reformulated RGBW color filters and an overcoat layer. The EL efficiency of one‐stacked WOLED is 18.7 cd/A with CIE x, y coordinates of (0.31, 0.35) at 4.3 mA/cm2. By combining WOLED and the DOD structure using a‐Si backplane, we obtained the high aperture ratio up to 67% in the panel having the same pixel size for 32 ″ Full HD, and use of color filters developed for our WOLED enables color gamut to become wider than the 100% NTSC in uniform color space (u',v').
The chemical structure of the interface between Ag with Li2O and tri(8-hydroxyquinoline) aluminum (Alq) was investigated by using in situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Li2O on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between Li2O and Alq leads to gap state formation in highest occupied molecular orbital of Alq. Efficient bottom-emitting devices employing such a cathode scheme have been demonstrated.
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