Using the quantum hydrodynamic model of plasmas and with quantum effects arising through the Bohm potential and the Fermi degenerate pressure, the possible drift waves and their instabilities have been investigated in considerable detail in a nonuniform dusty magnetoplasma. It is found that in the presence of a nonuniform ambient magnetic field, the drift waves grow in amplitude by taking energy from the streaming ions and density inhomogeneity. The implication of the drift wave instability for nonthermal electrostatic fluctuations to laboratory and astrophysical environments is also pointed out.
Dust particles that are ubiquitously present in space interact with the space plasma and can modify the existing modes and affect the growth rate of instability. In this work, the effects of homogeneous dust on the obliquely propagating anisotropic, low beta drift magnetosonic wave, and its related kinetic instability are analyzed using the gyrokinetic model. A comparison is made of different effects due to the dust density, the ions and electrons density inhomogeneity, and the temperature anisotropy. It is observed that both the temperature anisotropy and the presence of dust species augment each other in suppressing the growth of the drift instability. Our results may, therefore, be useful in studying the propagation characteristics of drift magnetosonic wave in space near the Sun where the environment is anisotropic, and the dust species also exist.
The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.
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