Two-point probe and Raman spectroscopy have been used to investigate the effects of vacuum annealing and argon bombardment on the conduction characteristics of multiwalled carbon nanotubes (MWCNTs). Surface contamination has a large effect on the two-point probe conductivity measurements which results in inconsistent and nonreproducible contacts. The electric field under the contacts is enhanced which results in overlapping depletion regions when probe separations are small (<4 μm) causing very high resistances. Annealing at 200 and 500 °C reduced the surface contamination on the MWCNT, but high resistance contacts still did not allow intrinsic conductivity measurements of the MWCNT. The high resistance measured due to the overlapping depletion regions was not observed after annealing to 500 °C. Argon bombardment reduced the surface contamination more than vacuum annealing at 500 °C but caused a slight increase in the defects concentration, enabling the resistivity of the MWCNT to be calculated, which is found to be dependent on the CNT diameter. The observations have significant implications for future CNT-based devices.
Measurement of the angular and overlap dependence of the conduction between two identical carbon nanotubes (CNTs), with the same diameter and chirality, has only been possible through theoretical calculations; however, our observation of increased resistance adjacent to the junction between two CNTs facilitates such measurements. Since electrical resistance was found to increases with increased diameter ratio, applying 10 V to one of dissimilar diameter CNTs results in cleavage at the junction. Manipulation of the resulting identical CNTs (created by cutting a single CNT) allows for the direct measurement of the angular and parallel overlap conduction. Angular (13<θ<63°) dependence shows two minima (22° and 24°) and a maximum at 30°, and conduction between parallel CNTs increases with overall tip separation, but shows a sinusoidal relationship with contact length, consistent with the concept of atomic scale registry.
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