A series of layered oxychalcogenide and oxypnictide solids is described that contain oxide layers separated by distinct layers, which contain the softer chalcogenide (S, Se, Te) or pnictide (P, As, Sb, Bi) anions. The relationships between the crystal structures adopted by these compounds are described, and the physical and chemical properties of these materials are related to the structures and the properties of the elements. The properties exhibited by the oxychalcogenide materials include semiconductor properties, for example, in LaOCuCh (Ch = chalcogenide) and derivatives, unusual magnetic properties exhibited by the class Sr 2MO 2Cu 2-deltaS 2 (M = Mn, Co, Ni), and redox properties exhibited by the materials Sr 2MnO 2Cu 2 m-0.5 S m+1 ( m = 1-3) and Sr 4Mn 3O 7.5Cu 2Ch 2 (Ch = S, Se). Recent results in the oxychalcogenide area are reviewed, and some new results on the intriguing series of compounds Sr 2MO 2Cu 2-deltaS 2 (M = Mn, Co, Ni) are reported. Oxypnictides have received less recent attention, but this is changing: a new frenzy of research is underway following the discovery of high-temperature superconductivity (>40 K) in derivatives of the layered oxyarsenide LaOFeAs. The early results in this exciting new area will be reviewed.

The antiferromagnetic structures of the layered oxychalcogenides (Sr(1-x)Ba(x))(2)CoO(2)Cu(2)S(2) (0 ≤ x ≤ 1) have been determined by powder neutron diffraction. In these compounds Co(2+) is coordinated by four oxide ions in a square plane and two sulfide ions at the apexes of an extremely tetragonally elongated octahedron; the polyhedra share oxide vertexes. The magnetic reflections present in the diffraction patterns can in all cases be indexed using a √2a × √2a × c expansion of the nuclear cell, and nearest-neighbor Co(2+) moments couple antiferromagnetically within the CoO(2) planes. The ordered magnetic moment of Co(2+) in Sr(2)CoO(2)Cu(2)S(2) (x = 0) is 3.8(1) μ(B) at 5 K, consistent with high-spin Co(2+) ions carrying three unpaired electrons and with an additional significant unquenched orbital component. Exposure of this compound to moist air is shown to result in copper deficiency and a decrease in the size of the ordered moment to about 2.5 μ(B); there is a strong correlation between the size of the long-range ordered moment and the occupancy of the Cu site. Both the tetragonal elongation of the CoO(4)S(2) polyhedron and the ordered moment in (Sr(1-x)Ba(x))(2)CoO(2)Cu(2)S(2) increase with increasing Ba content, and in Ba(2)CoO(2)Cu(2)S(2), which has Co(2+) in an environment that is close to purely square planar, the ordered moment of 4.5(1) μ(B) at 5 K is over 0.7 μ(B) larger than that in Sr(2)CoO(2)Cu(2)S(2), so the unquenched orbital component in this case is even larger than that observed in octahedral Co(2+) systems such as CoO. The experimental observations of antiferromagnetic ground states and the changes in properties resulting from replacement of Sr by Ba are supported by ab initio calculations on Sr(2)CoO(2)Cu(2)S(2) and Ba(2)CoO(2)Cu(2)S(2). The large orbital moments in these systems apparently result from spin-orbit mixing of the unequally populated d(xz), d(yz), and d(z(2)) orbitals, which are reckoned to be almost degenerate when the CoO(4)S(2) polyhedron reaches its maximum elongation. The magnitudes of the ordered moments in high-spin Co(2+) oxide, oxychalcogenide, and oxyhalide systems are shown to correlate well with the tetragonal elongation of the coordination environment. The large orbital moments lead to an apparently magnetostrictive distortion of the crystal structures below the Neél temperature, with the symmetry lowered from tetragonal I4/mmm to orthorhombic Immm and the size of the distortion correlating well with the size of the long-range ordered moment for all compositions and for temperature-dependent data gathered on Ba(2)CoO(2)Cu(2)S(2).

The synthesis, structure, and electrical properties of the oxysulfide CaZnOS are reported. The white compound has a band gap of 3.7(1) eV and crystallizes in hexagonal space group P6(3)mc (No. 186) with a = 3.75726(3) A, c = 11.4013(1) A, and Z = 2. The noncentrosymmetric structure, which has few analogues, is composed of isotypic puckered hexagonal ZnS and CaO layers arranged so that ZnS3O tetrahedra are all aligned parallel, resulting in a polar structure. The compound shows type 1 non-phase-matchable second harmonic generation, determined using 1064 nm radiation, with an efficiency approximately 100 times that of alpha-SiO2 and a piezoelectric coefficient of 38 pm V-1. Although polar, CaZnOS is not ferroelectric and the pyroelectric coefficient is very small, approximately 0.0 microC m-2 K-1 between room temperature and 100 degrees C.

The wide-band-gap semiconductor BaZnOS adopts a high-symmetry modification of the SrZnO2 structure type and contains layers of vertex-linked ZnO2S2 tetrahedra, which represent a novel coordination environment for zinc in the solid state. BaZnOS: orthorhombic, space group Cmcm; a = 3.9619(2) angstroms, b = 12.8541(7) angstroms, c = 6.1175(4) angstroms, Z = 4. Diffuse-reflectance spectroscopy measurements reveal a direct band gap of 3.9(3) eV, consistent with the white color and the results of band structure calculations. The band gap is larger than those observed in ZnO and ZnS, consistent with the more ionic nature of BaZnOS. Attempts to dope this compound electronically have so far not proved possible.