Crystal data for α‐, β‐ and γ‐Ag2WO4 were collected from Cu Kα1 powder diagrams, α‐Ag2WO4 is orthorhombic (Pn2n) with a = 10.820(2), b = 12.018(2) and c = 5.900(1) Å. β‐Ag2WO4 is hexagonal (P63 or P63/m) with a = 11.0925(3) and c = 7.5424(4) Å. γ‐Ag2WO4 is cubic (Fd3m, spinel type) with a = 9.352(1) Å.
The aberration monitor allows independent determination of spherical, coma, astigmatism and three point in a single experiment using existing equipment. The monitor consists of a circular phase object, with a diameter of ' A/NA and a phase depth of A/2. Due to the relative large diameter, the image prints as a narrow ring into the resist. Without aberrations its contours are concentric circles. Aberrations deform the ring in a characteristic way. A detailed analysis of the ring shape through focus identifies the aberrations of the projection lens. A linear aberration model is compared with simulations. Experimental results of various aberrations are shown and are correlated to line width measurements and interferometric lens data.
The impact of high doping levels on the threshold voltage of MOS transistors is discussed. The threshold voltage of surface channel devices is shown to be affected through the quantummechanical splitting of the energy levels in the conduction band. A significant threshold voltage shift is reported at room temperature for deepsubmicron n-channel devices and needs to be taken into account in the design of the devices. A simple analytical model to account for this effect is proposed.
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