Non-destructive techniques such as scanning infrared microscopy (SIRM), Fourier transform infrared spectroscopy (FTIR), light-beam-induced current (LBIC) mapping and diffusion length (L n ) measurement techniques, associated with chemical etching were used to detect precipitates in annealed Czochralski (Cz) silicon wafers and to control their interaction with self-interstitials injected into the bulk by phosphorus diffusion or by oxidation. The effect of metallic contamination was also studied by copper diffusion. After nucleation (750 • C) and/or growth (900 • C) annealings phosphorus diffusion at 900 • C for 4 h shrinks the precipitates revealed by SIRM. This shrinkage is due to a marked injection of self-interstitials in the bulk. Annealing of the two-step annealed samples in oxygen produces a similar effect. However, new defects are detected by SIRM, defects which are identified as stacking faults.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.