For a computing process such as making a decision, a software controlled chip of several transistors is necessary. Inspired by how a single cell amoeba decides its movements, the theoretical 'tug of war' computing model was proposed but not yet implemented in an analogue device suitable for integrated circuits. Based on this model, we now developed a new electronic element for decision making processes, which will have no need for prior programming. The devices are based on the growth and shrinkage of Ag filaments in α-Ag2+δS gap-type atomic switches. Here we present the adapted device design and the new materials. We demonstrate the basic 'tug of war' operation by IV-measurements and Scanning Electron Microscopy (SEM) observation. These devices could be the base for a CMOS-free new computer architecture.
We report measurements of vibrational mode shapes of mechanical resonators made from ultrathin carbon nanomembranes (CNMs) with a thickness of approximately 1 nm. CNMs are prepared from electron irradiation induced cross-linking of aromatic self-assembled monolayers and the variation of membrane thickness and/or density can be achieved by varying the precursor molecule. Singleand triple-layer freestanding CNMs were made by transferring them onto Si substrates with square/ rectangular orifices. The vibration of the membrane was actuated by applying a sinusoidal voltage to a piezoelectric disk on which the sample was glued. The vibrational mode shapes were visualized with an imaging Mirau interferometer using a stroboscopic light source. Several mode shapes of a square membrane can be readily identified and their dynamic behavior can be well described by linear response theory of a membrane with negligible bending rigidity. By applying Fourier transformations to the time-dependent surface profiles, the dispersion relation of the transverse membrane waves can be obtained and its linear behavior verifies the membrane model. By comparing the dispersion relation to an analytical model, the static stress of the membranes was determined and found to be caused by the fabrication process. V C 2015 AIP Publishing LLC.
The Ag2S gap-type atomic switch based “tug of war” device is a promising element for building a new type of CMOS free neuromorphic computer-hardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene–oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the “tug of war”, is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the “tug of war” devices could be explained in the case of p-type conductive gap-materials.
The mode shape of bending waves in thin silicon and silicon carbide membranes is measured as a function of space and time, using a phase shift interferometer with stroboscopic light. The mode shapes hold information about all the relevant mechanical parameters of the samples, including the spatial distribution of static prestress. We present a simple algorithm to obtain a map of the lateral tensor components of the prestress, with a spatial resolution much better than the wavelength of the bending waves. The method is not limited to measuring the stress of bending waves. It is applicable in almost any situation, where the fields determining the state of the system can be measured as a function of space and time.
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