Competition for Au gettering in Si between two cavity layers of different diameter (34 and 12 nm) is examined. Au is initially contained in the large cavity layer made by He implantation. Transport of Au towards the second, small diameter cavity layer is measured by ion scattering. The true surface in both layers is determined by electron microscopy. Small cavities are found to be four times more efficient gettering sites than large cavities for the same amount of internal surface. This difference is explained by a simple model based on curvature thermodynamics, faceting, and surface reconstruction.
This article presents the results of a 2D carrier profile analysis of a finished 90 nm MPU with strained silicon by scanning capacitance microscopy (SCM). First, we show that the carrier concentration measurement dynamic range of SCM spans 1014_1020 cm-3. Then we present results that demonstrate p-n junction delineation on PMOS transistor with embedded SiGe in the source/drain regions. A big difference ofcarrier concentration in SiGe with respect to the surrounding silicon tends to indicate that in-situ boron doping was employed during SiGe S/D growth. We also report observed anomalous lateral "overgrowth" of SiGe overfield oxide that may compromise manufacturing yield.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.