Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.
Large-area (~cm 2 ) films of vertical heterostructures formed by alternating graphene and transition-metal dichalcogenide (TMD) alloys are obtained by wet chemical routes followed by a thermal treatment at low temperature. In particular, we synthesized stacked graphene and WxMo1-xS2 alloy phases that were used as hydrogen evolution catalysts. We observed a Tafel slope of 38.7 mV dec -1 and 96 mV onset potential (at current density of 10 mA cm -2 ) when the heterostructure alloy was annealed at 300 o C. These results indicate that heterostructures formed by graphene and W0.4Mo0.6S2 alloys are far more efficient than WS2 and MoS2 by at least a factor of two, and they are superior than other reported TMD systems. This strategy offers a cheap and low temperature synthesis alternative able to replace Pt in the hydrogen evolution reaction (HER). Furthermore, the catalytic activity of the alloy is stable over time,i.e. the catalytic activity does not experience a significant change even after 1000 cycles. Using density functional theory calculations, we found that this enhanced hydrogen evolution in the 4 WxMo1-xS2 alloys is mainly due to the lower energy barrier created by a favorable overlap of the d-orbitals from the transition metals and the s-orbitals of H2; with the lowest energy barrier occurring for the W0.4Mo0.6S2 alloy. Thus, it is now possible to further improve the performance of the "inert" TMD basal plane via metal alloying, in addition to the previously reported strategies such as creation of point defects, vacancies and edges. The synthesis of graphene/W0.4Mo0.6S2 produced at relatively low temperatures is scalable and could be used as an effective low cost Pt-free catalyst.5
Single-and few-layered transition metal dichalcogenides, such as MoS 2 and WS 2 , are emerging two-dimensional materials exhibiting numerous and unusual physicochemical properties that could be advantageous in the fabrication of unprecedented optoelectronic devices. Here we report a novel and alternative route to synthesize triangular monocrystals of MoS 2 and Mo x W 1-x S 2 by annealing MoS 2 and MoS 2 /WO 3 precursors, respectively, in the presence of sulfur vapor. In particular, the Mo x W 1-x S 2 triangular monolayers show gradual concentration profiles of W and Mo whereby Mo concentrates in the islands' center and W is more abundant on the outskirts of the triangular monocrystals. These observations were confirmed by atomic force microscopy, and high-resolution transmission electron microscopy, as well as Raman and photoluminescence spectroscopy. The presence of tunable PL signals depending on the Mo x W 1-x S 2 stoichiometries in 2D monocrystals opens up a wide range of applications in electronics and optoelectronics.
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