Dopant counterion diffusion has made the conjugated polymer pn homojunction a challenging target for decades. We report the electrochemical fabrication of a polyacetylene pn homojunction based on internally compensated forms where the dopant counterions are covalently bound to the polymer backbone. After drying under vacuum, the pn junction exhibits diode behavior with the ratio of the forward to reverse current at 2 V being 7. Despite such modest diode behavior, the fabricated pn junction is significant because it demonstrates the utility of internal compensation in the fabrication of metastable interfaces between dissimilarly doped conjugated polymers.

The electrochemical characterization of thin films of the ionically functionalized polyacetylene analogues poly(tetramethylammonium 2-cyclooctatetraenylethanesulfonate) (P(A)) and poly[(2-cyclooctatetraenylethyl)trimethylammonium trifluoromethanesulfonate] (P(C)) is reported along with an electrochemical approach to the fabrication of interfaces between dissimilarly doped conjugated polymers. Such interfaces are of interest because of the central role analogous interfaces based on silicon play in conventional microelectronics. The cationically functionalized P(C) can be both oxidatively (p-type) and reductively (n-type) doped to a conductive state, whereas the anionically functionalized P(A) can only be p-type doped. The voltammetry of P(C) displays relatively sharp waves with minimal history or relaxation effects. In contrast, the voltammetry of P(A) exhibits broader doping waves and a dependence on electrochemical history. The apparent formal potentials reported in 0.075 M Me4NBF4/CH3CN were -1.04 V versus SCE for the n-doping of P(C) and 0.40 and 0.30 V versus SCE for the p-doping of P(C) and P(A), respectively. These values depend on electrolyte concentration consistent with a Donnan potential due to the selective partitioning of ions between the electrolyte and polymer. Electrochemical quartz crystal microbalance data demonstrate that the p-type doping of P(A) and the n-type doping of P(C) proceed with the loss of ions from the polymer film and the formation of the internally compensated state. Voltammetry in tetrabutylammonium poly(styrenesulfonate)/CH3CN supporting electrolyte is also reported. It is demonstrated how a polyanion supporting electrolyte in concert with a conjugated ionomer can be used to control redox chemistry by governing the sign of ions available for charge compensation. In particular, we demonstrate the self-limiting oxidation of P(A) to inhibit deleterious overoxidation and prepare the precisely internally compensated state; the selective oxidation of P(A) over P(C), despite their similar apparent formal potentials; and the inhibition of the reoxidation of the n-doped form of P(C). The use of such polyelectrolyte-mediated electrochemistry in the fabrication of interfaces between dissimilarly doped conjugated polymers is discussed.

Unidirectional electronic current is reported for a device based on the interface between an anionically functionalized and a cationically functionalized polyacetylene. The unidirectional current in this mixed ionically/electronically conducting system is electronic but is regulated by asymmetry in the ionic processes.