Inverted perovskite solar cells (IPSCs) have attracted great attention in recent years due to reliable operational stability, negligible hysteresis and low-temperature fabrication process. To accelerate its commercialization, the focus of...
The photovoltaic performance and stability of perovskite solar cells (PSCs) are closely related to the quality of the absorption layer. Further improving the crystallinity of perovskite film is of great...
Perovskite materials with ABX3 chemical formula have high absorption coefficient, high mobility and low exciton binding energies, so they are promising candidates for the next generation of the photovoltaic device....
Inverted perovskite solar cells (IPSCs) attract growing interest because of their simple configuration, reliable stability, and compatibility with tandem applications. However, the power conversion efficiency (PCE) of IPSCs still lags behind their regular counterparts, mainly due to the more serious nonradiative loss. Here, we design three donor−π−acceptor (D−π−A) dipoles with various dipole moments to introduce extra electric fields at the interface of perovskites and electron transport materials via the binding between the carboxylate end group and under-coordinated divalent Pb. The chemical binding reduces the recombination centers, while the superposition of the builtin electric field facilitates the electron collection and the hole blocking. As a result, the nonradiative loss is diminished as the dipole moments of D−π−A dipoles increase, which contributes to a PCE of 21.4% with enhancement in both the open-circuit voltage and fill factor. The stability for an unencapsulated device is also improved due to the hydrophobic property of D−π−A dipoles.
The inverted perovskite solar cell has made great progress in recent years and the quality of the heterojunction has played a key role. Here, a series of halide‐substituted benzoic acid molecules are investigated as the bridge between nickel oxide and the perovskite, constructing a stable and efficient buried heterojunction via halogen bonding. The designed molecules are anchored at the surface of NiO by the coordination between the carboxyl and hydroxyl groups. On the opposite site of the molecules, strong halogen bonding is formed by binding the undercoordinated I− at the buried surface of the perovskite, which inhibits the generation of I2 under continuous light soaking and thereby suppresses the formation of voids. Moreover, the highly directional halogen bonding is beneficial for the oriented growth of perovskite crystals, which accelerate the carrier transport. As a result, the champion device yields a power conversion efficiency (PCE) of 22.02% and the encapsulated device maintains 91.86% of the initial PCE under continuous 1‐sun illumination at 55 °C for 1000 h.
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