Ferroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.
Solid-state planar micromachining techniques have been applied in the fabrication of two types of vacuum microelectronic devices. Cold-cathode devices based on field emission and hot-cathode devices based on thermal-field emission have been fabricated for possible use in high-speed, high-operating temperature device applications. Polycrystalline silicon has been used as the cathode, anode, and gate material in these device structures. On-chip vacuum-sealed cavities have been formed through the micromachining of polycrystalline silicon microbridges. An elevated and sealed ljolycrystalline silicon emission filament has also been formed by surface micromachining techniques. This is believed to be the first report of microfabricated hot-vacuum tube on a chip. The measured transconductance of the hot-cathode triode is 3.4 W V . Device operation and measured current versus voltage characteristics are presented for these devices.
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