We report the synthesis and characterization of silicon doped MgB 2 films fabricated by hybrid physical-chemical vapor deposition using silane as the doping source. Various amounts of Si up to 9% were added into MgB 2 thin films, which were epitaxially grown in situ on SiC. Compared with that of the undoped film, the superconducting transition temperature of the doped film does not show significant change; however the magnetic critical current density (J c ) has been increased. J c for the film with 5.0 at.% doping goes up to 2.7 × 10 5 A cm −2 for a 3 T perpendicular field. And the slope of the upper critical field curve for the doped film is slightly higher than that for the undoped MgB 2 film.
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