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The effect of inkjet printing infiltration of Gd 0.1 Ce 0.9 O 2-x in NiO-Gd 0.1 Ce 0.9 O 2-x anodes on the performance of symmetrical and button cells was investigated. The anodes were fabricated by inkjet printing of suspension and sol inks. Symmetrical cells were produced from composite suspension inks on Gd 0.1 Ce 0.9 O 2-x electrolyte. As-prepared scaffolds were infiltrated with Gd 0.1-Ce 0.9 O 2 ink. Increasing the number of infiltration steps led to formation of ''nano-decoration'' on pre-sintered anodes. High resolution SEM analysis was employed for microstructural characterization revealing formation of fine anode sub-structure with nanoparticle size varying in the range of 50-200 nm. EIS tests were conducted on symmetrical cells in 4% hydrogen/argon gas flow. The measurements showed substantial reduction of the activation polarization as a function of the number of infiltrations. The effect was assigned to the extension of the triple phase boundary. The i-V testing of a reference (NiO-8 mol% Y 2 O 3 stabilized ZrO 2 /NiO-Gd 0.1 Ce 0.9 O 2-x /Gd 0.1 Ce 0.9-O 2-x /Gd 0.1 Ce 0.9 O 2-x -La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-d ) cell and an identical cell with infiltrated anode revealed *2.5 times improvement in the maximum output power at 600°C which corresponded with the reduction of the polarization resistance of the symmetrical cells at the same temperature (2.8 times). This study demonstrated the potential of inkjet printing technology as an infiltration tool for cost effective commercial SOFC processing. Graphical abstract