1 to 20 GHz monolithic FET amplifiers have been designed and fabricated. The design approacn is based on a detailed analysis of the impedances and tne cut-off frequency of the transmission lines to reduce tile ripple and to increase the bandwidth up to tne maximum capabilities of tnie PET's. Tne packaged MMIC results show an overall gain of 11*1 dB for 2 stages from 1 to 19.5 GHz witn an overall noise figure of 7.5 dd. Better performances can be acnieved witn 0,5 pm HEMT's 8 dB gain from 1 to 20 GHz with a much lower noise figure (. 5 dB)
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