We herein report on the preparation of epoxy nanocomposites, which had enhanced thermal conductivities but were still electrical insulators, incorporating hybrid nanosheets (NSs) with sandwich structures composed of thermally reduced graphene oxide (TRGO) and silica. The silica layer covered the surface of the TRGO, hindering electrical conduction and effectively forming a 3D phonon transport channel that had a unique effect on the electrical and thermal properties of the epoxy matrix. A 1 wt% TRGO-silica NS epoxy nanocomposite maintained an electrical resistivity of 2.96 × 10(11)Ω cm, and its thermal conductivity was 0.322 W m(-1) K(-1), which is 61% higher than the conductivity of an epoxy nanocomposite without TRGO-silica NSs (0.2 W m(-1) K(-1)).

The combination of conventional transition-metal-catalyzed coupling (2 e process) and photoredox catalysis (1 e process) has emerged as a powerful approach to catalyze difficult cross-coupling reactions under mild reaction conditions. Reported is a palladium carbodicarbene (CDC) complex that mediates both a Suzuki-Miyaura coupling and photoredox catalysis for C-N bond formation upon visible-light irradiation. These two catalytic pathways can be combined to promote both conventional transition-metal-catalyzed coupling and photoredox catalysis to mediate C-H arylation under ambient conditions with a single catalyst in an efficient one-pot process.

A new method, called gate current Random Telegraph Noise (I G RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, I G RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the softbreakdown (SBD) behavior of a device can be clearly identified. Its I G RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.

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