Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

Yang, Yea Ru; Breil, N.; Yang, Chao‐Yao; Hsieh, J.C.; Chiang, Fu-Kuo; Colombeau, B.; Guo, B. N.; Shim, K. H.; Variam, N.; Leung, G.; Hebb, Jeffrey P.; Sharma, Shashank; Ni, Chi-Nung; Ren, Xuejun; Wen, Jianguo; Park, J.H.; Chen, H.; Chen, S.; Hou, M.; Tsai, Du-Cheng; Kuo, J.; Liao, Duanquan; Chudzik, M.; Lin, Shiuan Huei; Huang, Hung-Fu; Yang, Ni; Lin, Jian-Yang; Tsai, C. T.; Hung, G.C.; Hsu, Sheng Chia; Cheng, Osbert; Wu, J. Y.; Yew, Tri‐Rung

doi:10.1109/vlsit.2016.7573384

Cited by 20 publications

(14 citation statements)

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“…Third, the contact metal band alignment with the 2D semiconductor may be tuned by Fermi level depinning, 11 or alloying and strain, as was previously achieved by alloying Ge into Si source/drain regions to improve p-type contacts. 82 Further efforts in each of these areas are critical to reduce contact resistance below 100 Ω•μm for 2D semiconductors.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, thicker 2D material at the contacts should be explored ( e.g ., by regrowth), not unlike “raised source/drain” of Si devices, where only the top one or two layers react with the metal and the bottom layers remain unharmed. Third, the contact metal band alignment with the 2D semiconductor may be tuned by Fermi level depinning, or alloying and strain, as was previously achieved by alloying Ge into Si source/drain regions to improve p -type contacts . Further efforts in each of these areas are critical to reduce contact resistance below 100 Ω·μm for 2D semiconductors.…”

Section: Resultsmentioning

confidence: 99%

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Uncovering the Effects of Metal Contacts on Monolayer MoS₂

et al. 2020

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Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS 2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS 2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that, 1) ultrathin oxidized Al dopes MoS 2 ntype (>2×10 12 cm -2 ) without degrading its mobility, 2) Ag, Au, and Ni deposition causes varying levels of damage to MoS 2 (broadening Raman E' peak from <3 cm -1 to >6 cm -1 ), and 3) Ti, Sc, and Y react with MoS 2 . Reactive metals must be avoided in contacts to monolayer MoS 2 , but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that 4) thin metals do not significantly strain MoS 2 , as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS 2 , and broadly applicable to many other 2D semiconductors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Uncovering the Effects of Metal Contacts on Monolayer MoS₂

et al. 2020

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“…1 In state-of-the-art 3D FinFET devices from the 22 nm node, Ti-based silicide, employed previously as the source/drain (S/D) contact material in 0.35-0.18 μm technology nodes, [2][3][4][5][6][7][8][9][10] has resurged in the manufacturing and research community. [11][12][13][14][15][16][17][18][19] For FinFET devices, the 3D architecture imposes unique constraints for the selection of S/D contact materials. It is well known that in the conventional planar device era, Ni(Pt)Si was widely employed as the S/D contact material because of its low thermal budget, low resistivity and low Si consumption.…”

mentioning

confidence: 99%

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSi_xfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Mao

Wang

et al. 2017

ECS J. Solid State Sci. Technol.

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From the 22 nm 3D FinFET technology node, the Ti silicide-last contact scheme based on ultrathin TiSix (0 < x< 2) has replaced the Ni(Pt)Si employed widely in previous planar CMOS nodes, due to its inherent advantages. Most work on Ti direct contacting with Si focuses on improving the specific contact resistivity (ρc) by all means. The detailed investigation on the formation of ultrathin TiSix at relatively low temperature (≤600°C), is, however, rarely reported. In this work, a fundamental material’ study of the formation of ultrathin TiSix on highly P-doped Si substrates with different Ge pre-amorphization implantation (PAI) conditions is described, for the future application in Ti direct contact scheme on n-Si. The sheet resistance (Rsh), phase identity, morphology, as well as the elemental distribution for the resulting TiN/Ti/TiSix stacking films were characterized using four-point probe measurements, X-ray diffraction (XRD), Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM) in conjunction with energy-dispersive X-ray spectroscopy (EDX), and Nano-Beam-Diffraction (NBD). It is found that Ge PAI can significantly promote the Ti silicidation at relatively low temperature, which is also consistent with previous publications. The optimal temperature for Ti silicidation is ∼550°C, at which amorphous Si (α-Si) caused by Ge PAI is crystallized by Solid Phase Epitaxial Regrowth (SPER), while the silicidation process is also adequate. Across as-formed TiSix films, the composition is not constant and altered from Ti-rich at the metal side to Si-rich at the Si substrate side. Furthermore, the as-formed ultrathin TiSix film is proposed to be not completely amorphous, instead it is a mixture of amorphous TiSix embedded with numerous fine grains at the early growth stage.

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“…Metal silicides are extensively used in micro-electronics for contacting the source and drain regions of Si-based transistors [1]. C54-TiSi 2 was introduced in Complementary Metal Oxide Semiconductor (CMOS) devices for ultra-large scale integration during the early 90's and has subsequently been replaced by 5 sequentially CoSi 2 and NiSi for high-performance applications [2]. C54-TiSi 2 is still being used in traditional planar CMOS technology for applications with high reliability demands, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Preprint submitted to Journal of L A T E X Templates August 23, 2018 [15] Si(100) (101)//(111) (313)//(011) [17] (130)//(111) (004)//(110) [17,18] (101)//(111) (121)//(110) [17] applications. In recent years, Ti-based contacts have regained considerable attention for implementation in FinFET-technology through the formation of a thin Ti-Si compound, where Ti-based contacts offer a significant advantage over Ni because of the lower mobility of Ti in Si [3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Axiotaxy and epitaxial textures in C54-TiSi₂ films on Si(0 0 1) and Si(1 1 1) substrates

Geenen¹,

Jordan-Sweet²,

Lavoie³

et al. 2018

J. Phys. D: Appl. Phys.

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Titanium silicide can be used in micro-electronic applications to reduce the contact resistance for Silicon-based transistors. This paper gives an overview of the preferred orientation between the Ti-silicide films and Si(001) and Si(111)oriented substrates. We report on several axiotaxial alignments, which are observed in addition to the previously known epitaxial alignments. The axiotaxial textures can be related to the epitaxial one and its stability is interpreted through plane-to-plane alignment across the interface. Reducing the Ti film thickness from 30 to 8 nm favours the epitaxial alignment instead of the axiotaxial alignments.

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Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

Cited by 20 publications

References 0 publications

Uncovering the Effects of Metal Contacts on Monolayer MoS₂

Uncovering the Effects of Metal Contacts on Monolayer MoS₂

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSi_xfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Axiotaxy and epitaxial textures in C54-TiSi₂ films on Si(0 0 1) and Si(1 1 1) substrates

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Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

Cited by 20 publications

References 0 publications

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Uncovering the Effects of Metal Contacts on Monolayer MoS2

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSixfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(0 0 1) and Si(1 1 1) substrates

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Product

Resources

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Uncovering the Effects of Metal Contacts on Monolayer MoS₂

Uncovering the Effects of Metal Contacts on Monolayer MoS₂

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSi_xfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Axiotaxy and epitaxial textures in C54-TiSi₂ films on Si(0 0 1) and Si(1 1 1) substrates