In this letter we show how a single beam optical trap offers the means for three-dimensional manipulation of semiconductor nanorods in solution. Furthermore rotation of the direction of the electric field provides control over the orientation of the nanorods, which is shown by polarisation analysis of two photon induced fluorescence. Statistics over tens of trapped agglomerates reveal a correlation between the measured degree of polarisation, the trap stiffness and the intensity of the emitted light, confirming that we are approaching the single particle limit.
We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n 2 was within the range of −5.6 × 10 −13 cm 2 /W < n 2 < −3.1 × 10 −13 cm 2 /W.
Abstract-We report supercontinuum generation using a mode-locked VECSEL emitting 400-fs pulses at a 3-GHz repetition rate, amplified with a cascaded ytterbium-doped fiber amplifier system up to 40 W of average power. The pulses were then recompressed to their original duration via a high throughput transmission grating compressor, and used to generate supercontinuum in two samples of photonic crystal fiber (PCF); an all-normal dispersion PCF, and a PCF with a zero dispersion wavelength of 1040 nm, creating 20 dB spectral bandwidths of 200 nm and 280 nm respectively.
Abstract:We describe time-resolved measurements of the evolution of the spectrum of radiation emitted by an optically-pumped continuous-wave InGaAs-GaAs quantum well laser, recorded as lasing builds up from noise to steady state. We extract a fitting parameter corresponding to the gain dispersion of the parabolic spectrum equal to −79 ± 30 fs 2 and −36 ± 6 fs 2 for a resonant and anti-resonant structure, respectively. Furthermore the recorded evolution of the spectrum allows for the calculation of an effective FWHM gain bandwidth for each structure, of 11 nm and 18 nm, respectively.
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