188SAITO, BOZKURT, AND MURA tion is for the distributed dislocations in the square domains rather than discrete dislocations. Our method of analysis also has an advantage to observe the stress distributions inside of the dislocation core if the square domain is assumed as the core of the dislocation. Figure 5 shows the variation of the maximum value of 0'33 along the thickness of the film for several values of a/I. This indicates the stress relaxation caused by the presence of the free surface.For the contrast study of dislocation images by electron microscopy, as Yoffe 9 pointed out, the quantity it j = LAA uj(x 1 , X a , x 3 ) exp(21Tjk~3) dx 3 is important rather than the displacement itself. The quantity can easily be obtained from (9) and (12). A semiempirical model has been developed for the frequency dependence of the photoconductive response of high-resistivity extrinsic Ge samples operating at cryogenic temperatures. The model predicts that the photoconductive gain saturates to the sweepout-limited value of ~ for frequencies greater than G(O)/1T'T p , where G(O) is the dc photoconductive gain and 'Tp=HOP is the dielectric relaxation time. Measurements of signal as a function of modulation frequency and background for a large Ge : Hg sample at liquid neon (-28 OK) show good agreement with the model.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.