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Light detection and ranging (LIDAR) system based on unmanned aerial vehicles (UAVs) recently are in rapid advancement, meanwhile portable and flexible mini-UAV-borne laser scanners have been a hot research field, especially for the complex terrain survey in the mountains and other areas. This study proposes a power line inspection system solution based on mini-UAV-borne LIDAR system–AOEagle, developed by Academy of Opto-Electronics, Chinese Academy of Sciences, which mounted on a Multi-rotor unmanned aerial vehicle for complex terrain survey according to real test. Furthermore, the point cloud data was explored to validate its applicability for power line inspection, in terms of corridor and line laser point clouds; deformation detection of power towers, etc. The feasibility and advantages of AOEagle have been demonstrated by the promising results based on the real-measured data in the field of power line inspection.

We report on the use of amorphous Ni-Al film ͑a-Ni-Al͒ as conductive diffusion barrier layer to integrate La 0.5 Sr 0.5 CoO 3 / PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without any discernible interdiffusion/reaction in the sample. The physical properties of the capacitors are vertically characterized as the parameters of memory elements. Excellent ferroelectric properties, e.g., large remnant polarization of ϳ22 C/cm 2 , small coercive voltage of ϳ1.15 V, being fatigue-free, good retention characteristic, imply that amorphous Ni-Al is an ideal candidate for diffusion barrier for the high-density ferroelectric random access memories integrated with silicon transistor technology. microelectromechanical systems ͑MEMS͒, 7-9 and pyroelectric sensors.10 Currently, great efforts have been intensively made to integrate PZT based ferroelectric capacitors with modern silicon transistor technology to yield one-transistorone-capacitor ͑1T-1C͒ based memory architectures 2 in order to realize high-density ferroelectric random access memories. In such a memory cell, the drain must be electrically in contact with the bottom electrode of ferroelectric capacitor stack. If the PZT ferroelectric capacitor stack is directly integrated on Si, however, the chemical reactions and interdiffusion between the bottom electrode and silicon may generate a nonconducting layer, resulting in the failure of the memory cell due to the deterioration of the electric contact between the bottom electrode and silicon. To solve this problem, an extra layer, usually called "diffusion barrier layer," is interposed between PZT capacitor stack and Si wafer to separate them from direct contact. Ideally the diffusion barrier should possess a nature of good oxidation resistance, high thermal and chemical stabilities and large electrical conductivity ͑so as to function as a bridge to conduct electric current between its bordering layers͒. In literature, several intermetallic systems such as Pt-͑Ti,Al͒N and Ir-TiN were investigated for the use of barriers.7,11-13 While these materials possess very high electrical and thermal conductivities, there are still some concerns such as the formation of Pt hillock structure due to the stress release in the processing, the difficulty in developing a reliable reactive ion etching process for the refractory metals, and the inherently high cost.14 To find alternative material systems is thus an active topic in recent years. Among several candidates, amorphous Ni-Al seems to be a good choice because it is highly resistant to oxidation, low cost, and ready to be patterned by conventional etching techniques. In this letter, we report the integration and characterization of a ferroelectric heterostructure La 0.5 Sr 0.5 CoO 3 /Pb Zr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 on highly doped silicon using amorphous Ni-Al thin film as the conductive diffusion barrier layer ͑the whole structure is abbreviated as LSCO/...

ABSTRACT:As a naturally part of information technology, Remote Sensing (RS) is strongly required to provide very precise and accurate information product to serve industry, academy and the public at this information economic era. To meet the needs of high quality RS product, building a fully functional and advanced calibration system, including measuring instruments, measuring approaches and target site become extremely important. Supported by MOST of China via national plan, great progress has been made to construct a comprehensive calibration and validation (Cal&Val) site, which integrates most functions of RS sensor aviation testing, EO satellite on-orbit caration and performance assessment and RS product validation at this site located in Baotou, 600km west of Beijing. The site is equipped with various artificial standard targets, including portable and permanent targets, which supports for long-term calibration and validation. A number of fine-designed ground measuring instruments and airborne standard sensors are developed for realizing high-accuracy stepwise validation, an approach in avoiding or reducing uncertainties caused from nonsynchronized measurement. As part of contribution to worldwide Cal&Val study coordinated by CEOS-WGCV, Baotou site is offering its support to Radiometric Calibration Network of Automated Instruments (RadCalNet), with an aim of providing demonstrated global standard automated radiometric calibration service in cooperation with ESA, NASA, CNES and NPL. Furthermore, several Cal&Val campaigns have been performed during the past years to calibrate and validate the spaceborne/airborne optical and SAR sensors, and the results of some typical demonstration are discussed in this study.