Sub-micron structures are routinely fabricated by electron beam lithography (EBL). However EBL is a time consuming and costly technology. We present a technology for fabrication of nanostructures by standard UV-lithography and thermal nanoimprint lithography (NIL). NIL-stamps with sub-30 nm patterns are fabricated by standard micrometer resolution cleanroom processing, i.e. UV-lithography, reactive ion etching and thermal oxidation, and the pattern is transferred to a polymer thin film on a substrate by NIL. Subsequently the patterned polymer film is used either as a direct etching mask to transfer the pattern to the substrate or as a metal lift-off mask. This way we have demonstrated the fabrication of sub-100 nm nanochannels in silicon oxide and sub-50 nm gold lines on silicon.
This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 µm thick top copper levels, integrated in an Advanced LowPower 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current ones fabricated in a standard CMOS BEOL. According to measurement results, reported inductors offer quality factor Q greater than 22 and current capability I max up to 20 mA/µm @ 125 °C, performances suitable for RF power applications.
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