The wear corrosion properties of magnetic recording disks which correlate to hardness, lubricant bonded ratio and friction coefficient of ultra thin diamond like carbon films deposited with ion beam hydrogenated carbon and sputtering nitrogenated carbon respectively when, deposited on NiP/Al substrates were investigated. Results show that the ion beam deposition hydrogenated carbon (IBD-CH) films prepared at lower C 2 H 2 gas flowrates or 1 nm sputter nitrogenated carbon (CN) deposited on 2 nm IBD-CH layers, exhibit a higher Raman intensity ratio I d /I g and G peak frequency. The hardness of diamond like carbon films increases with decreasing G peak frequency and intensity ratio I d /I g . The lubricant bonded ratio is dramatically increased from 12 to 38% when a 1?0 nm CN is deposited on a 2?0 nm IBD-CH layer. IBD-CH with 35 sccm C 2 H 2 gas flowrate which shows the lowest weight loss, the lowest friction coefficient and the best wear corrosion resistance because of the optimised lubricant bonded ratio and the highest hardness.
A systematic study of the enhancement of Schottky barriers to n-GaAs diodes has been carried out using the Ni-Al binary system. The diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/n-GaAs, have been realized by sputter deposition at a base pressure ∼2xl0-7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs contacts. The enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. The formation of this (Al,Ga)As layer was explained in terms of a regrowth mechanism. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer is believed to react with the Ni-Al layer to form the (Al,Ga)As layer when subjected to a high temperature annealing. A (200) dark field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase.
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