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As a sequel to previous work the sink concentration dependence of reaction constants for point defect trapping by randomly distributed spherical sinks is studied. The theories of Ham, Waite, and Brailsford et al. will mutually be compared and a model based on random walk theory will be presented. Several Monte Carlo simulations of trapping processes are performed and are analysed with the models given.

Helium desorption measurements with a Mo‐crystal show (a) that during stage III annealing vacancies are removed but that (b) vacancies containing helium (HeV), which are immobile, are not affected. Since interstitials injected at room temperature do recombine with HeV's, it seems that, in stage III, vacancies become mobile and interstitials remain trapped (in e.g. clusters). These observations are supported by atomistic calculations. Measured desorption energies of helium from vacancies in Mo show good agreement with the calculated energies.

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