Abstract-Computed tomography (CT) dosimetry normally usesan ionization chamber 100 mm long to estimate the computed tomography dose index (CTDI), however some reports have already indicated that small devices could replace the long ion chamber to improve quality assurance procedures in CT dosimetry. This paper presents a novel dosimetry system based in a commercial phototransistor evaluated for CT dosimetry. Three detector configurations were developed for this system: with a single, two and four devices. Dose profile measurements were obtained with them and their angular response were evaluated. The results showed that the novel dosimetry system with the phototransistor could be an alternative for CT dosimetry. It allows to obtain the CT dose profile in details and also to estimate the CTDI in longer length than the 100 mm pencil chamber. The angular response showed that the one device detector configuration is the most adequate among the three configurations analyzed in this study.
The properties of the thermally stimulated exoelectron emission (TSEE) and thermoluminescent (TL) emission of topaz-glass composites were studied with the aim of using them as solid-state dosemeters. The TSEE response was studied as a function of radiation energy and as a function of absorbed dose. Topaz-glass composites presented a linear TL and TSEE response to dose within a range of 0.01-1 Gy. The topaz-glass composites presented higher TSEE peaks than topaz-Teflon pellets. In the dosimetry of radiotherapic fields normally the responses of the topaz-glass dosemeters are comparable to topaz-Teflon pellets. The results confirmed that these new dosemeters can be useful in monitoring the quality of the radiation sources. This dose mapping technique is particularly useful in investigating dose distribution throughout a planned target volume.
MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley subfemtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.
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