New single crystals of Gd203 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron difhction reveals a six-fold sy"e@y in the in-plane epitaxy of the rare earth oxides. Single-aystal x-ray difhction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fdly relaxed oxide films are of excellent st~ctural quality.
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